FYSV446 Challenges and Radiation Performance of Advanced and Emerging CMOS Technologies (JSS28) (1 op)
Osaamistavoitteet
After this course, the student knows the different technologies used in modern electronics and what are their differences in respect to performance and radiation sensitivity. Student will have an idea about the different mechanisms underlying the radiation response in the modern technologies and how they affect the designing of the components.
Suoritustavat
Lectures and computer exercises (TBD)
厂颈蝉盲濒迟枚
CMOS devices, driven by minimum device geometry, performance enhancement, cost issues and low power consumption, are achieved by using optimizing process modules, introducing new materials and implementing novel device concepts. FD technologies with ultra-thin body and buried oxide (UTBB SOI) have potential down to the 10 nm mode. There exists strong competition between planar UTBB SOI and bulk FinFETs. Tunnel-FETs (TFETs), relying on band-to-band-tunneling and allowing steep subthreshold swings are enabling a lower power consumption. Further scaling leads to gate-all-around and nanowire devices. Optimized epitaxial growth resulted in the fabrication of Ge (p-channel), III-V (n-channel) or hybrid Ge/III-V devices on a Si substrate.
The radiation performance of several of these advanced and emerging technologies will be analyzed and discussed. Some of the available models to explain the experimental data will be reviewed.
Esitietovaatimukset
Basic knowledge on electronics (transistor operation) and radiation matter interactions.